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KT2016K26000AEU28T,日本進口京瓷晶振,KT2016K小型表面貼裝晶振

KT2016K26000AEU28T,日本進口京瓷晶振,KT2016K小型表面貼裝晶振KT2016K26000AEU28T,日本進口京瓷晶振,KT2016K小型表面貼裝晶振

產(chǎn)品簡介

KT2016K26000AEU28T,日本進口京瓷晶振,KT2016K小型表面貼裝晶振,從型號參數(shù)上可直觀體現(xiàn)其核心特性:"2016"代表著該晶振的封裝尺寸為2.0mm×1.6mm,屬于典型的小型表面貼裝規(guī)格,這種緊湊的設計使其能夠輕松嵌入到智能手機,智能手表,無線傳感器等對空間要求極高的電子設備中.相比傳統(tǒng)較大尺寸的晶振,KT2016K26000AEU28T在安裝時無需占用過多PCB板空間,為設備的輕薄化設計和多功能集成提供了更大的可能性,尤其適合當前消費電子設備追求極致便攜性與外觀精致度的發(fā)展方向.

產(chǎn)品詳情

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KT2016K26000AEU28T,日本進口京瓷晶振,KT2016K小型表面貼裝晶振


日本京瓷在晶體材料研發(fā)與制造工藝上擁有數(shù)十年的技術沉淀,KT2016K26000AEU28T作為其旗下產(chǎn)品,充分繼承了京瓷對品質(zhì)的嚴苛追求.在核心材料方面,該晶振采用高純度石英晶體作為諧振單元,這種材料具有穩(wěn)定的物理特性,能夠在不同環(huán)境條件下保持穩(wěn)定的諧振頻率,為晶振的高精度輸出奠定了基礎.在頻率精度上,KT2016K26000AEU28T表現(xiàn)出色,其標稱頻率為26MHz,頻率偏差能夠控制在極小范圍(通常可達到±10ppm以內(nèi)),確保為電子設備提供精準的時鐘信號.這一特性在通信設備中尤為重要,例如在4G/5G移動終端中,精準的時鐘信號是保障射頻模塊,基帶芯片協(xié)同工作的關鍵,能夠有效減少信號傳輸中的誤碼率,提升通信質(zhì)量.
此外,京瓷通過先進的封裝工藝與可靠性測試,使KT2016K26000AEU28T有源晶振具備優(yōu)異的環(huán)境適應性.在溫度穩(wěn)定性方面,該晶振能夠在-40℃至+85℃的寬溫范圍內(nèi)穩(wěn)定工作,即使在極端溫度變化下,頻率漂移也能得到有效控制；在抗振動與抗沖擊性能上,經(jīng)過嚴格測試,其可承受一定強度的機械應力,滿足汽車電子,工業(yè)控制等領域?qū)υ骷煽啃缘囊?同時,晶振的密封性設計使其具備良好的抗潮濕,抗腐蝕能力,能夠在多塵,高濕等復雜環(huán)境中保持長期穩(wěn)定運行.


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KT2016K26000AEU28T,日本進口京瓷晶振,KT2016K小型表面貼裝晶振

原廠型號Original model ： KT2016K26000AEU28T 品牌 brand ： Cardinal晶振
Manufacturer品牌 京瓷晶振 Operating Temperature溫度 -20 ~ +75°C
Series型號 KT2016K Current - Supply (Max) -
Type 類型 TCXO Package Height高度 0.8mm
Frequency 頻率 26M Termination腳位 4 pads
輸出方式Output： 削峰正弦波 Package Type封裝類型 4-SMD
Voltage - Supply電壓 2.8V Packaging包裝 Tape and Reel
Frequency Stability頻率穩(wěn)定度 ±0.5ppm 安裝方式Installation ： Surface mount
Size / Dimension 尺寸 2016進口貼片 最小包裝數(shù) MPQ ： 3000

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KT2016K26000AEU28T,日本進口京瓷晶振,KT2016K小型表面貼裝晶振

KT2016K

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KT2016K26000AEU28T,日本進口京瓷晶振,KT2016K小型表面貼裝晶振

KC2016K1.50000C10E00 2.0 x 1.6mm 0.8 1.5 -10 70 ± 50 CMOS
KC2016K1.50000C16E00 2.0 x 1.6mm 0.8 1.5 -40 105 ± 50 CMOS
KC2016K1.50000C1GE00 2.0 x 1.6mm 0.8 1.5 -40 85 ± 50 CMOS
KC2016K1.50000C1SE00 2.0 x 1.6mm 0.8 1.5 -10 70 ± 30 CMOS
KC2016K1.50000C1UE00 2.0 x 1.6mm 0.8 1.5 -10 70 ± 25 CMOS
KC2016K1.84320C10E00 2.0 x 1.6mm 0.8 1.8432 -10 70 ± 50 CMOS
KC2016K1.84320C16E00 2.0 x 1.6mm 0.8 1.8432 -40 105 ± 50 CMOS
KC2016K1.84320C1GE00 2.0 x 1.6mm 0.8 1.8432 -40 85 ± 50 CMOS
KC2016K1.84320C1SE00 2.0 x 1.6mm 0.8 1.8432 -10 70 ± 30 CMOS
KC2016K1.84320C1UE00 2.0 x 1.6mm 0.8 1.8432 -10 70 ± 25 CMOS
KC2016K10.0000C10E00 2.0 x 1.6mm 0.8 10 -10 70 ± 50 CMOS
KC2016K10.0000C16E00 2.0 x 1.6mm 0.8 10 -40 105 ± 50 CMOS
KC2016K10.0000C1GE00 2.0 x 1.6mm 0.8 10 -40 85 ± 50 CMOS
KC2016K10.0000C1SE00 2.0 x 1.6mm 0.8 10 -10 70 ± 30 CMOS
KC2016K10.0000C1UE00 2.0 x 1.6mm 0.8 10 -10 70 ± 25 CMOS
KC2016K10.2400C10E00 2.0 x 1.6mm 0.8 10.24 -10 70 ± 50 CMOS
KC2016K10.2400C16E00 2.0 x 1.6mm 0.8 10.24 -40 105 ± 50 CMOS
KC2016K10.2400C1GE00 2.0 x 1.6mm 0.8 10.24 -40 85 ± 50 CMOS
KC2016K10.2400C1SE00 2.0 x 1.6mm 0.8 10.24 -10 70 ± 30 CMOS
KC2016K10.2400C1UE00 2.0 x 1.6mm 0.8 10.24 -10 70 ± 25 CMOS
KC2016K10.5554C10E00 2.0 x 1.6mm 0.8 10.5554 -10 70 ± 50 CMOS
KC2016K10.5554C16E00 2.0 x 1.6mm 0.8 10.5554 -40 105 ± 50 CMOS
KC2016K10.5554C1GE00 2.0 x 1.6mm 0.8 10.5554 -40 85 ± 50 CMOS
KC2016K10.5554C1SE00 2.0 x 1.6mm 0.8 10.5554 -10 70 ± 30 CMOS
KC2016K10.5554C1UE00 2.0 x 1.6mm 0.8 10.5554 -10 70 ± 25 CMOS
KC2016K100.000C10E00 2.0 x 1.6mm 0.8 100 -10 70 ± 50 CMOS
KC2016K100.000C16E00 2.0 x 1.6mm 0.8 100 -40 105 ± 50 CMOS
KC2016K100.000C1GE00 2.0 x 1.6mm 0.8 100 -40 85 ± 50 CMOS
KC2016K100.000C1SE00 2.0 x 1.6mm 0.8 100 -10 70 ± 30 CMOS
KC2016K100.000C1UE00 2.0 x 1.6mm 0.8 100 -10 70 ± 25 CMOS
KC2016K11.2896C10E00 2.0 x 1.6mm 0.8 11.2896 -10 70 ± 50 CMOS
KC2016K11.2896C16E00 2.0 x 1.6mm 0.8 11.2896 -40 105 ± 50 CMOS
KC2016K11.2896C1GE00 2.0 x 1.6mm 0.8 11.2896 -40 85 ± 50 CMOS
KC2016K11.2896C1SE00 2.0 x 1.6mm 0.8 11.2896 -10 70 ± 30 CMOS
KC2016K11.2896C1UE00 2.0 x 1.6mm 0.8 11.2896 -10 70 ± 25 CMOS
KC2016K12.0000C10E00 2.0 x 1.6mm 0.8 12 -10 70 ± 50 CMOS
KC2016K12.0000C16E00 2.0 x 1.6mm 0.8 12 -40 105 ± 50 CMOS
KC2016K12.0000C1GE00 2.0 x 1.6mm 0.8 12 -40 85 ± 50 CMOS
KC2016K12.0000C1SE00 2.0 x 1.6mm 0.8 12 -10 70 ± 30 CMOS
KC2016K12.0000C1UE00 2.0 x 1.6mm 0.8 12 -10 70 ± 25 CMOS
KC2016K12.2880C10E00 2.0 x 1.6mm 0.8 12.288 -10 70 ± 50 CMOS
KC2016K12.2880C16E00 2.0 x 1.6mm 0.8 12.288 -40 105 ± 50 CMOS
KC2016K12.2880C1GE00 2.0 x 1.6mm 0.8 12.288 -40 85 ± 50 CMOS
KC2016K12.2880C1SE00 2.0 x 1.6mm 0.8 12.288 -10 70 ± 30 CMOS
KC2016K12.2880C1UE00 2.0 x 1.6mm 0.8 12.288 -10 70 ± 25 CMOS
KC2016K12.4560C10E00 2.0 x 1.6mm 0.8 12.456 -10 70 ± 50 CMOS
KC2016K12.4560C16E00 2.0 x 1.6mm 0.8 12.456 -40 105 ± 50 CMOS
KC2016K12.4560C1GE00 2.0 x 1.6mm 0.8 12.456 -40 85 ± 50 CMOS
KC2016K12.4560C1SE00 2.0 x 1.6mm 0.8 12.456 -10 70 ± 30 CMOS
KC2016K12.4560C1UE00 2.0 x 1.6mm 0.8 12.456 -10 70 ± 25 CMOS
KC2016K12.5000C10E00 2.0 x 1.6mm 0.8 12.5 -10 70 ± 50 CMOS
KC2016K12.5000C16E00 2.0 x 1.6mm 0.8 12.5 -40 105 ± 50 CMOS
KC2016K12.5000C1GE00 2.0 x 1.6mm 0.8 12.5 -40 85 ± 50 CMOS
KC2016K12.5000C1SE00 2.0 x 1.6mm 0.8 12.5 -10 70 ± 30 CMOS
KC2016K12.5000C1UE00 2.0 x 1.6mm 0.8 12.5 -10 70 ± 25 CMOS
KC2016K125.000C10E00 2.0 x 1.6mm 0.8 125 -10 70 ± 50 CMOS
KC2016K125.000C16E00 2.0 x 1.6mm 0.8 125 -40 105 ± 50 CMOS
KC2016K125.000C1GE00 2.0 x 1.6mm 0.8 125 -40 85 ± 50 CMOS
KC2016K125.000C1SE00 2.0 x 1.6mm 0.8 125 -10 70 ± 30 CMOS
KC2016K125.000C1UE00 2.0 x 1.6mm 0.8 125 -10 70 ± 25 CMOS

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